, 28 2005 . 14:43
+
AlGaN/GaN –
()
GaN, (,
, )
, ,
, , (HFET) AlGaN/GaN-
.
AlGaN/GaN-
AlGaAs/GaAs .
Eg
AlGaN/GaN, ∆Ec > 0.5 ,
; Al ∆Ec . 2D-
, ns > 1⋅1013 -2, , GaAs;
AlGaN,
-
AlGaN. vs > 2.5⋅107 / E
GaN , GaAs;
. GaN 8 , GaAs (33⋅105 / 4⋅105
/, ),
- Vsd 100÷400 /.
ns
- GaN- 10
, GaAs; GaN- ,
. GaN-HFET,
8.2 - 9.1 / 47%; 10
– 7 / 62% [1].
(Ld < 1 )
- ,
( GaN ηΩo=91 ,
GaAs ηΩo=36 ). GaN
, ..
Ec ≈6 . GaN
Ld = 0.1 106 .
-
GaN- - Eg;
( Ld = 0.1 0.6 ).
GaN (1.7 /⋅) GaAs (0.53 /⋅)
400 [2].
(0.2 m0 GaN 0.067 m0 GaAs)
.
- GaN-HFET Isd
,
GaN 2D- 3D- .
4- , –
83
AlGaN/GaN-HFET, AlGaAs/GaAs,
[3].
Si3N4 ns -
. SiO2/AlGaN/GaN
.
MOCVD
. , - ,
SiC [4].
GaN-HFET - .
GaN- ,
,
, ,
i- GaN.
: Si-LDMOS < 2 , SiC-
MESFET – 4÷7 ; AlGaN/GaN –HFET GaAs,
, 45 ÷ 70 . GaN-HFET
.
1. R.Pengelly, Comp. Semicond., 6 (4), 36 (2000).
2. A.Vescan et al., J. Cryst. Growth, 201/202, 327 (1999).
3. J.Deng et al., MIJ-NSR, 5, W4.5 (2000).
4. L.Eastman et al, MIJ-NSR,2,17 (1997);EGW-4,Nottingham, July 2000, Abstr.I-T-13.
